Workshop – Heterogeneous Integration of Nanomaterials and Innovative Devices

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Workshop Title:

Heterogeneous Integration of Nanomaterials and Innovative Devices


SINANO Institute

Venue: Seminar Room


The SINANO Institute (www.sinano.eu) organizes in Krakow its 15th  edition of the SINANO workshop at ESSDERC-ESSCIRC. The European Roadmap for Nanoelectronics, released on December 2018, shows the high importance of the Heterogeneous Integration for both Academic and  Industrials. The aim of this workshop will be to present the main results in this domain, particularly focusing on 3D integration, 2D Nanomaterials, MEMS,  Neuromorphic and Quantum Computing as well as System Integration. Three sessions are planned: 3D integration methodologies, Integration of new materials, and Applications.


8:00 – 8:30 Registration
8:30 – 8:45 Enrico Sangiorgi, Director SINANO Institute, Presentation of the Workshop

8:45 – 9:15 Giorgos Fagas, Tyndall, Heterogeneous Integration Roadmap: a System’s Perspective

Session 3D Integration Methodologies

9:15-10:00 Per-Erik Hellström, KTH Ge devices for sequential 3D integration”

10:00 – 10:30 Coffee – Break

10:30-11:15 Aida Todri-Sanial, CNRS_LIMM: Physical design and optimisation methods for TSV-based 3D and monolithic 3D integration

11:15-12:00 Fabrice Nemouchi, CEA-Leti 3D integration the building blocks of upcoming technologies”

12:00-12:45 Josef Weber, Fraunhofer, EMFT “Technologies for 3D Heterogeneous System Integration”

13:00 – 14:00 Lunch

Session Applications

14:00-14:45 Humberto Campanella, Tyndall “Challenges and Opportunities of MEMS for 5G RF Front-end Module integration”

14:45-15:15 Giorgos Fagas, Tyndall “Europractice extended Technologies and Services: focus on System Integration”

15:30 – 16:00 Coffee – Break

Session Integration of new Materials

16:00-16:45 Ian Povey, Tyndall “Large-area growth of 2D transition metal dichalocogenides by vapour phase methods” 

16:45-17:30 Georg Duesberg, Uni BW Munich “Low Temperature growth of layered Transition Metal Dichalocogenides for BEOL integration

17:30-18:15 Max Lemme, AMO Towards wafer-scale integration of graphene and 2D Materials for electronics, photonics and sensor applications”

Workshop details:

Heterogeneous Integration Roadmap: a System’s Perspective

Giorgos Fagas

Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

ITRS 2.0 contained a comprehensive chapter on Heterogeneous Integration, focusing exclusively on the technology independent of the application pull. The most recent IRDS update discusses the applications in more detail but still does not provide a holistic framework to define Figures of Merit within the system application constraints. It is therefore justified to consider a new approach for road mapping Heterogeneous Integration for System Level Applications. I will present such an innovative roadmap that came out from the NEREID project – NanoElectronics Roadmap for Europe: Identification and Dissemination – and goes beyond the simple inclusion of static numerical tables. The approach is based on building a general top-down description of the requirements (a hierarchical map) that has to be met in a bottom-up process, with concepts, methods, values and expectations strictly related to the application of reference.

Session 3D Integration Methodologies

Technologies for 3D Heterogeneous System Integration

Josef Weber

Fraunhofer, EMFT

3D Heterogeneous System Integration will become a main challenge for realising miniaturised advanced systems consisting of sensor-, computing-, memory- and communication functionality. Technologies for integration of MEMS and IC-devices like Fraunhofer EMFT’s TSV-SLID using tungsten-filled vias and Solid-Liquid Interdiffusion (SLID) of Cu/Sn are introduced. Low-temperature bonding technologies for chip-to-wafer and wafer-to-wafer assembly will be presented and assessed with respect to reliability. EMFT’s 3D Foil Assembly Technology enables integration of flexible components on foils, foil-to-foil stacking and development of flexible foil systems. Additionally Integration of ultra-thin silicon in foils will be demonstrated focusing on RF-applications.

Session Applications

Challenges and Opportunities of MEMS for 5G RF Front-end Module Integration

Humberto Campanello

Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

The standards for the Fifth Generation of wireless mobile communications New Radio (5G NR), WiFi, and IoT for sub-6GHz operation are demanding more complex RF front-end modules (RF-FEMs) to serve new bands and signal processing schemes that will add to the existing modules and architectures. Such modules are expected to feature combinations of System-in-Package (SiP) and System-on-Chip (SoC) architectures in order to meet the specs for module size, functionality, and manufacturability. Currently, there are gaps at all levels, from functionality, to materials, to manufacturing technologies. This talk will address some of these topics and proposals to close the gaps to build novel RF-FEMs for 5G NR, from the perspective of acoustic MEMS and RFIC integration.


Europractice extended Technologies and Services: Focus on System Integration

Giorgos Fagas

Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

The mission statement of Europractice is to provide European industry and academia with a platform to develop Electronic Smart Integrated Systems, from advanced prototype design to volume production. The latter will be achieved by providing affordable and easier access to a wide range of state-of-the-art industry-grade fabrication technologies and design tools complemented with training and support to the customer in all critical steps which are needed. It builds on many years’ experience at imec, STFC, FhG-IIS, CMP and Tyndall. Currently over 600 academic institutes are using these services to train the next generation of engineers for the European industry. In this talk, I will present the overall Europractice services and engagement model followed by a focused update on the extended services of System Integration beyond the Multi-Project Wafer IC.

Session Integration of new Materials

Large-area growth of 2D transition metal dichalocogenides by vapour phase methods

Ian M Povey

Tyndall National Institute, University College Cork, Ireland

As the roadmap for device integration moves to increasingly complex 3D architectures 2D transition metal dichalocogenides (TMD) have emerged as materials of interest for back end of line (BEOL) integration. The methodology for 3D sequential integration of these materials is currently not fully realised, due to the stringent deposition requirements regarding conformality, large area nanometre scale uniformity and strict thermal budgets (400-550°C depending on duration). Vapour phase growth methods, such as atomic layer deposition (ALD) and chemical vapour deposition (CVD have been widely investigated as one possible solution). However, in such studies, BEOL thermal budget restrictions are often overlooked with growth or post-growth annealing often in excess of 900°C. In addition, small samples are often presented, which although often demonstrating excellent device properties, do not address the difficulties in scaling the growth process to a technological relevant level. Here I will present an overview of the current state of the art in vapour growth methods and discuss our own work scaling MoS2 growth to 300 mm wafers at sub 400°C.

Low-Temperature Growth of Layered Transition Metal Dichalocogenides for BEOL Integration

Georg S. Duesberg

Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany

Two-dimensional materials such as transition metal dichalcogenides (TMDs) are intensively investigated because of their potential applications in future electronics. So far mainly group six (Mo/W) TMDs have been investigated, which show thickness depend electronic and optical properties. Metal-to-semiconductor transitions, high mobilities, and high potential for various sensing applications, now have moved the group 10 (Pt/Pd) TMDs or Nobel Metal Dichalcogenides (NMDs) to the center of attention. In this presentation, the low temperature synthesis of various TMDs by thermally assisted conversion (TAC) is presented. The composition and morphology of the resulting large scale layers are investigated by several characterization techniques including Raman spectroscopy, SPM and X-ray photoelectron spectroscopy. In particular, the low temperature TAC synthesis PtSe2 potentially allows back end of line (BEOL) integration compatible with silicon technology. The effects of growth on the underlying substrates or investigated by TOF-SIMS and transmission electron microscopy. Further, as pre-pattered structures can be grown by the TAC, which allows to fabricate electronic devices using standard micro-fabrication technology. In this regard, examples for high performance chemical sensors, IR-photodetectors and MEMS devices with PtSe2 will be presented.

Towards Wafer-Scale Integration of Graphene and 2D Materials for Electronics, Photonics and Sensor Applications

Max Lemme

AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

Graphene has been researched intensely over the past 15 years. Its intrinsic electronic and physical properties are unrivaled in many aspects. Hundreds of related two-dimensional (2D) materials with different properties have since been added to the 2D portfolio. Yet, to achieve end-customer products and enter markets in electronics, photonics or sensing, a scalable manufacturing process technology is required. In this talk, I will discuss the major bottlenecks and challenges towards the integration of graphene and 2D materials into semiconductor processing lines. I will also introduce promising device concepts, for which 2D materials clearly could make a difference, such as photodetectors and pressure sensors.

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