ESSDERC 2019 Keynote – Carbon Nanotube FETs, Resistive RAM, Monolithic 3D

Keynote title (tentative):

The N3XT 1,000X for the Coming Superstorm of Abundant Data: Carbon Nanotube FETs, Resistive RAM, Monolithic 3D


Subhasish Mitra, Stanford University, US


The world’s appetite for analyzing massive amounts of data is growing dramatically. The computation demands of these abundant-data
applications, such as machine learning, far exceed the capabilities of today’s computing systems, and can no longer be met by isolated
improvements in transistor technologies, memories or integrated circuit architectures alone. To achieve unprecedented functionality,
speed and energy efficiency, one must create transformative NanoSystems which exploit unique properties of underlying
nanotechnologies to implement new architectures.

This talk will present the N3XT (Nano-Engineered Computing Systems Technology) approach that enables such NanoSystems through: (i) new
computing system architectures leveraging emerging device (logic and memory) nanotechnologies and their dense 3D integration with
fine-grained connectivity for computation immersed in memory, (ii) new logic devices (carbon nanotube field-effect transistors for
implementing high-speed and low-energy logic circuits) as well as high-density non-volatile memory (resistive RAM), amenable to (iii)
ultra-dense (monolithic) 3D integration of thin layers of logic and memory devices that are fabricated at low temperature.

A wide variety of N3XT hardware prototypes represent leading examples of transforming scientifically-interesting nanomaterials and
nanodevices into actual NanoSystems. N3XT NanoSystems target 1,000X system-level energy-delay product benefits especially for
abundant-data applications. Such massive benefits enable a broad range of applications that push new frontiers, from deeply-embedded
computing systems all the way to the cloud.

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