The era of future applications in the field of the internet of things or the advanced automotive will require very complex System on Chip (SoC) co-integrating key elements such as high speed digital at low voltage, high performance RF and analog devices with embedded fast non-volatile memories. The integration of those advanced ingredients will face two major constraints: being cost effective and fully reliable. In order to fulfill suitably the performance level expected by applications without any compromise for cost and reliability, we propose a dedicated technology merging the 28FDSOI solution with a Phase Change Memory (PCM) architecture. In this joint keynote, we will present this technology focusing first on the advantages in term of low voltage operation and devices variability reduction brought by body biasing. Superior analog behavior will be discussed by evidencing performance enhancement on usual design blocks. Finally, embedded PCM scheme will be presented showing reliability results compatible with automotive grade-0 criteria.
Franck Arnaud joined STMicroelectronics in 1995 after his graduation for a Master degree in the field of electronics from the Superior School of Electricity, so called Sup’Elc from Paris university. He started the ramp-up of 0.35um CMOS technology as FEOL and device engineer. In 2008, he spent three years in Fishkill area working in ISDA semi-conductor alliance led by IBM as 32/28nm device manager. He moved back to Crolles site in France in 2010 where he took the responsibility of the 28nm program development for both bulk and FDSOI technologies as director. Since 2016, he is driving the development phase of 28FDSOI-ePCM technology in Crolles site.